Kokubunji, Japan

Shinji Ohnishi

This inventor holds 1 USPTO granted patent. Top assignee: Hitachi, Ltd.. Active years: 1985.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shinji Ohnishi. Retrieved from https://idiyas.com/inventor/shinji-ohnishi-rbsc73hl

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 193(Granted Patents)


Company Filing History:


Years Active: 1985

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1 patent (USPTO):Explore Patents

Title: Innovations by Shinji Ohnishi

Introduction

Shinji Ohnishi is a notable inventor based in Kokubunji, Japan. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents

Shinji Ohnishi holds a patent for a semiconductor device that includes an alpha-particle shield. This invention relates to a semiconductor device that features a semiconductor element sealed by a ceramic package. A shielding member is strategically placed near the upper surface of the semiconductor element to protect it from alpha-particles emitted by the package.

Career Highlights

Ohnishi is associated with Hitachi, Ltd., a leading company in technology and innovation. His work at Hitachi has allowed him to explore advanced semiconductor solutions and contribute to the company's reputation for excellence in the industry.

Collaborations

Shinji Ohnishi has collaborated with notable colleagues, including Kanji Otsuka and Kazumichi Mitsusada. These collaborations have fostered a productive environment for innovation and development in semiconductor technology.

Conclusion

Shinji Ohnishi's contributions to semiconductor technology, particularly through his patented innovations, highlight his role as a key figure in the field. His work continues to influence advancements in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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