Nagaokakyo, Japan

Shinichi Higai


Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2014-2015

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2 patents (USPTO):Explore Patents

Title: Innovations by Shinichi Higai

Introduction

Shinichi Higai is a notable inventor based in Nagaokakyo, Japan. He has made significant contributions to the field of materials science, particularly in the development of advanced perovskite materials. With a total of 2 patents, his work is recognized for its innovative approach to dielectric properties.

Latest Patents

Higai's latest patents include a perovskite material with anion-controlled dielectric properties and a thin film capacitor device. The crystalline perovskite composite paraelectric material features nano-regions containing rich Nanions dispersed in a nano-grain sized matrix of crystalline oxide perovskite material. The formula (ABO)-(ABON) is utilized, where A represents a divalent element and B represents a tetravalent element. The parameters γ and (1-α) are defined within specific ranges, ensuring optimal performance of the material.

Career Highlights

Shinichi Higai is currently employed at Murata Manufacturing Co., Ltd., a leading company in electronic components. His work at Murata has allowed him to focus on innovative solutions that enhance the functionality of electronic devices.

Collaborations

Higai has collaborated with notable colleagues such as Ivoyl P Koutsaroff and Akira Ando. These partnerships have contributed to the advancement of his research and the successful development of his patents.

Conclusion

Shinichi Higai's contributions to the field of materials science, particularly through his innovative patents, highlight his role as a significant inventor in the industry. His work continues to influence advancements in electronic components and materials technology.

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