This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Samsung Electronics Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Shinhwan Kwan: Innovator in Vertical Memory Devices
Introduction
Shinhwan Kwan is a notable inventor based in Suwon, South Korea. He has made significant contributions to the field of memory devices, particularly with his innovative designs that enhance performance and efficiency. His work is recognized within the industry, especially at Samsung Electronics Ltd., where he is currently employed.
Latest Patents
Shinhwan Kwan holds a patent for vertical memory devices. This invention includes gate electrodes, a channel, a first conductive through via, and insulation structures. The gate electrodes are strategically spaced apart on a substrate in a direction that is substantially perpendicular to the upper surface of the substrate. They may also be stacked in a staircase shape. The channel extends through the gate electrodes in the same direction. The first conductive through via connects electrically to a conductive pad of a first gate electrode and extends through second gate electrodes located beneath it. Insulation structures are formed between the first conductive through via and the sidewalls of each of the second gate electrodes, ensuring electrical insulation.
Career Highlights
Shinhwan Kwan's career at Samsung Electronics Ltd. has been marked by his dedication to advancing memory technology. His innovative approach to vertical memory devices has positioned him as a key player in the development of next-generation memory solutions. His work not only contributes to the company's portfolio but also impacts the broader technology landscape.
Collaborations
Shinhwan Kwan collaborates with talented colleagues, including Donghwan Kim and Younghwan Son. Their combined expertise fosters an environment of innovation and creativity, leading to groundbreaking advancements in memory technology.
Conclusion
Shinhwan Kwan's contributions to vertical memory devices exemplify his commitment to innovation in the tech industry. His work at Samsung Electronics Ltd. continues to influence the future of memory technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile