Company Filing History:
Years Active: 2014
Title: Shingo Muramoto - Innovator in Spintronics
Introduction
Shingo Muramoto is a prominent inventor based in Miyagi-ken, Japan. He has made significant contributions to the field of spintronics, particularly through his innovative patent related to ferromagnetic tunnel junction structures.
Latest Patents
Muramoto holds a patent for a ferromagnetic tunnel junction structure and a magnetoresistive effect device, as well as a spintronics device utilizing the same. This invention comprises a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer interposed between them. The tunnel barrier layer includes a crystalline non-magnetic material with constituent elements similar to those of a crystalline oxide that has a spinel structure as a stable phase. The non-magnetic material exhibits a cubic structure with a symmetry of space group Fm-3m or F-43m, where the atomic arrangement in the spinel structure is disordered. Notably, the effective lattice constant of the cubic structure is substantially half of the lattice constant of the oxide of the spinel structure. He has 1 patent to his name.
Career Highlights
Shingo Muramoto is affiliated with the National Institute for Materials Science, where he conducts research and development in advanced materials. His work focuses on enhancing the performance and efficiency of spintronic devices, which have the potential to revolutionize data storage and processing technologies.
Collaborations
Muramoto has collaborated with notable colleagues, including Hiroaki Sukegawa and Seiji Mitani. Their joint efforts have contributed to advancements in the understanding and application of spintronic materials.
Conclusion
Shingo Muramoto's innovative work in the field of spintronics highlights his role as a key inventor in advancing technology. His contributions are paving the way for future developments in materials science and electronic devices.