National Institute for Materials Science

Shingo Muramoto

Kazuhiro Hono

Hiroaki Sukegawa

Seiji Mitani

Tadakatsu Ohkubo

Masafumi Shirai

Yoshio Miura

Kouichiro Inomata

Kazutaka Abe

Tomohiko Niizeki

A ferromagnetic tunnel junction structure comprising a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer includes a crystalline non-magnetic material having constituent elements that are similar to those of an crystalline oxide that has spinel structure as a stable phase structure; the non-magnetic material has a cubic structure having a symmetry of space group Fm-3m or F-43m in which atomic arrangement in the spinel structure is disordered; and an effective lattice constant of the cubic structure is substantially half of the lattice constant of the oxide of the spinel structure.

Ferromagnetic tunnel junction structure and magnetoresistive effect device and spintronics device utilizing same

Growing community of inventors

Miyagi-ken, Japan

Shingo Muramoto