Mountain View, CA, United States of America

Shing C Wang

This inventor holds 1 USPTO granted patent. Top assignee: Lockheed Missiles & Space Company, Inc.. Active years: 1991.


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 34(Granted Patents)


Company Filing History:


Years Active: 1991

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1 patent (USPTO):Explore Patents

Title: Shing C Wang: Innovator in Semiconductor Laser Technology

Introduction

Shing C Wang is a notable inventor based in Mountain View, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of laser diodes. His innovative work has led to advancements that are crucial for various applications in electronics and telecommunications.

Latest Patents

Wang holds a patent for a surface-emitting laser diode. This invention features a vertical multilayer active region and a lateral buried heterojunction. The design effectively confines carriers to the active region, enabling laser action at room temperature under continuous-wave operation with a low threshold current of about 2 mA. This advancement is pivotal for enhancing the efficiency and performance of laser diodes.

Career Highlights

Shing C Wang has worked at Lockheed Missiles & Space Company, Inc., where he has been involved in cutting-edge research and development projects. His expertise in semiconductor lasers has positioned him as a key figure in the industry, contributing to various technological advancements.

Collaborations

Wang has collaborated with notable colleagues, including Mutsuo Ogura and Shyh Wang. These partnerships have fostered an environment of innovation and have led to significant contributions in the field of semiconductor technology.

Conclusion

Shing C Wang's work in semiconductor laser technology exemplifies the impact of innovation in modern electronics. His contributions continue to influence the development of efficient laser systems, showcasing the importance of inventors in advancing technology.

Profile summary based on public USPTO records.
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