Suwon, South Korea

Shin Wook Gahng

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shin Wook Gahng. Retrieved from https://idiyas.com/inventor/shin-wook-gahng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Innovator Shin Wook Gahng and His Contributions to Data Storage Technology.

Introduction

Shin Wook Gahng is a notable inventor based in Suwon, South Korea. He has made significant contributions to the field of data storage technology, particularly through his innovative patent that addresses performance degradation in storage devices.

Latest Patents

Gahng holds a patent titled "Method of operating storage device to recover performance degradation due to retention characteristic and method of operating data processing system including the same." This patent describes a storage device that includes multiple memory cells organized in pages and blocks. The invention outlines a data recovery method that enhances the reliability of data storage by detecting errors and relocating data as necessary.

Career Highlights

Shin Wook Gahng is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work focuses on improving the performance and reliability of storage devices, which are critical in today's data-driven world.

Collaborations

Gahng has collaborated with notable colleagues, including Sang Yong Lee and Chul Ju Lee, to advance research and development in storage technology.

Conclusion

Shin Wook Gahng's innovative work in data storage technology exemplifies the importance of continuous improvement in this field. His contributions are vital for enhancing the performance and reliability of storage devices in modern applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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