Tokyo, Japan

Shimpei Iijima

This inventor holds 1 USPTO granted patent. Top assignee: Texas Instruments Corporation. Active years: 2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shimpei Iijima. Retrieved from https://idiyas.com/inventor/shimpei-iijima-co0z05fa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 36(Granted Patents)


Company Filing History:


Years Active: 2000

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Shimpei Iijima

Introduction

Shimpei Iijima is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of integrated circuit technology. His work has implications for the development of advanced electronic devices.

Latest Patents

Iijima holds a patent for a "Method for fabricating an integrated circuit structure." This invention involves a method of treating a dielectric layer by heating it while subjected to an O₂ plasma, followed by heating in an ozone environment. This innovative approach can be beneficial in forming a capacitor dielectric, which is essential for DRAM memory devices. He has 1 patent to his name.

Career Highlights

Shimpei Iijima is currently employed at Texas Instruments Corporation, a leading company in the semiconductor industry. His work at Texas Instruments has allowed him to contribute to cutting-edge technologies that enhance electronic performance.

Collaborations

Iijima has collaborated with notable colleagues such as Tsuyoshi Tamaru and Masato Kunitomo. Their combined expertise has fostered advancements in integrated circuit design and fabrication.

Conclusion

Shimpei Iijima's innovative work in integrated circuit technology exemplifies the importance of research and development in the electronics field. His contributions continue to influence the advancement of memory devices and semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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