Beijing, China

Shihui Yin


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Inventor Shihui Yin: Pioneering Resistive Memory Technology

Introduction

Shihui Yin is an innovative inventor based in Beijing, China, known for his contributions to the field of resistive memory technology. With a respected standing in the academic realm, he currently works at Peking University, where he collaborates with other talented researchers to push the boundaries of modern electronics.

Latest Patents

Shihui Yin holds a patent for a groundbreaking invention titled "Resistive Memory and Method for Fabricating the Same." This patent introduces a resistive memory structure that incorporates a bottom electrode, a resistive layer, and a top electrode. The methodology described involves a unique conductive protrusion situated on the bottom electrode, which plays a crucial role in enhancing the memory's performance. By embedding this conductive protrusion in the resistive layer, the invention allows for a more intense distribution of the electric field, ultimately leading to improved stability and reliability in the operation of resistive memory devices.

Career Highlights

Throughout his career, Shihui Yin has focused on developing innovative solutions that contribute to advancements in memory technology. His work has not only expanded understanding in this technical area but has also provided practical applications that benefit the electronics industry. With one patent to his name, Yin is recognized for his commitment to research and development within his field.

Collaborations

In his pursuit of technological innovation, Shihui Yin has collaborated with esteemed colleagues such as Yimao Cai and Ru Huang. Together, they have worked on various aspects of resistive memory technology, helping to foster an environment of creativity and shared knowledge within their research institution.

Conclusion

Shihui Yin stands out as a notable inventor whose work in resistive memory technology is paving the way for future innovations. His contributions, marked by a significant patent, highlight the importance of research and collaboration in achieving technological progress. As he continues his work at Peking University alongside his colleagues, the potential for further breakthroughs in electronics remains promising.

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