This inventor holds 1 USPTO granted patent. Top assignees: Sanyo Semiconductor Co., Ltd., Semiconductor Components Industries, LLC. Active years: 2013.
Company Filing History:
1 out of 306 
1 out of 3,716 
Years Active: 2013
Title: Shiho Arimoto: Innovator in Semiconductor Technology
Introduction
Shiho Arimoto is a prominent inventor based in Ora-gun, Japan. She has made significant contributions to the field of semiconductor technology, particularly through her innovative designs and patents. Her work has had a lasting impact on the industry, showcasing her expertise and dedication.
Latest Patents
Shiho Arimoto holds a patent for a semiconductor device comprising a stack of a pn junction diode and a Schottky barrier diode. This invention provides a semiconductor device that features an anode of a Silicon Field Recovery Diode (Si-FRD) and a cathode of a Silicon Schottky Barrier Diode (Si-SBD) that are serially connected. The Si-SBD has a junction capacitance whose amount of accumulable charge is equal to or more than the amount of charge occurring at the time of reverse recovery of the Si-FRD, and it possesses a lower breakdown voltage than the Si-FRD.
Career Highlights
Throughout her career, Shiho has worked with notable companies in the semiconductor industry, including Sanyo Semiconductor Co., Ltd. and Semiconductor Components Industries, LLC. Her experience in these organizations has allowed her to refine her skills and contribute to groundbreaking advancements in semiconductor technology.
Collaborations
Shiho has collaborated with esteemed colleagues such as Seiji Miyoshi and Tetsuya Okada. These partnerships have fostered an environment of innovation and creativity, leading to the development of cutting-edge technologies.
Conclusion
Shiho Arimoto is a trailblazer in the semiconductor field, with a patent portfolio that reflects her innovative spirit and technical expertise. Her contributions continue to influence the industry, making her a noteworthy figure in the world of inventions.