Company Filing History:
Years Active: 2021
Title: **Shihai Xioa: Innovator in Memory Access Technologies**
Introduction
Shihai Xioa is a notable inventor based in Moscow, Russia, recognized for his contributions to computer memory access technologies. With one patented innovation to his name, he has demonstrated a keen ability to enhance the efficiency and effectiveness of memory systems in computing environments.
Latest Patents
Xioa's patent revolves around "Methods and systems for accessing a memory." This groundbreaking technology incorporates a first-level memory, a second-level memory, and a memory controller. The first-level memory serves as a cache for data housed in the second-level memory. By utilizing a systematic approach, the memory controller efficiently manages access requests for different memory blocks, establishing a mapping relationship with a designated cache line. This innovation enables the controller to centralize tag comparisons of access requests, thereby determining access hits in the first-level memory effectively.
Career Highlights
Shihai Xioa is a dedicated professional at Huawei Technologies Co., Limited, where he continues to push the boundaries of what's possible in memory access technologies. His work reflects a profound understanding of computer systems' intricate operations. The success of his patent underscores his expertise and commitment to innovation within the tech industry.
Collaborations
In his professional journey, Xioa works alongside prominent coworkers Qiaosha Zou and Wei Yang. Their collaboration within Huawei Technologies has undoubtedly fostered an environment of innovation and mutual growth, contributing to the advancement of memory access methods.
Conclusion
Shihai Xioa stands out as a significant figure in the realm of technology innovation, particularly in memory access systems. His achievements and patents exemplify the critical role inventors like him play in shaping the future of computing technologies. As industries continue to evolve, Xioa's work will likely influence the next generation of computer memory solutions.