Company Filing History:
Years Active: 2021
Title: Shih-Yi Lien: Innovator in Light Emitting Devices
Introduction
Shih-Yi Lien is a prominent inventor based in Tianjin, China. He has made significant contributions to the field of optoelectronics, particularly in the development of light emitting devices. His innovative work has led to the filing of a patent that showcases his expertise and creativity.
Latest Patents
Shih-Yi Lien holds a patent for a "Multi-layered tunnel junction structure, light emitting device having the same, and production method of such device." This invention features a multi-layered tunnel junction structure designed to be placed between two light emitting structures. The structure includes an n-type doped insulation layer, an n-type heavily doped layer, a metal atom layer, a p-type heavily doped layer, and a p-type doped insulation layer, all arranged in a specific order. This invention not only enhances the performance of light emitting devices but also provides a novel production method for such devices.
Career Highlights
Shih-Yi Lien is currently associated with Xiamen San'an Optoelectronics Co., Ltd., where he continues to push the boundaries of technology in the optoelectronics sector. His work has been instrumental in advancing the capabilities of light emitting devices, making them more efficient and effective.
Collaborations
Shih-Yi Lien has collaborated with notable colleagues, including Jingfeng Bi and Chaoyu Wu. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.
Conclusion
Shih-Yi Lien's contributions to the field of light emitting devices exemplify his dedication to innovation and excellence. His patent and ongoing work at Xiamen San'an Optoelectronics Co., Ltd. highlight his role as a key player in the advancement of optoelectronic technologies.