The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2021
Filed:
Dec. 12, 2019
Xiamen San'an Optoelectronics Co., Ltd., Xiamen, CN;
Jingfeng Bi, Tianjin, CN;
Chaoyu Wu, Xiamen, CN;
Duxiang Wang, Tianjin, CN;
Senlin Li, Tianjin, CN;
Chun-Yi Wu, Tianjin, CN;
Shih-Yi Lien, Tianjin, CN;
Xiamen San'an Optoelectronics Co., Ltd., Fujian, CN;
Abstract
A multi-layered tunnel junction structure adapted to be disposed between two light emitting structures includes an n-type doped insulation layer, as well as an n-type heavily doped layer, a metal atom layer, a p-type heavily doped layer, and a p-type doped insulation layer which are disposed on the n-type doped insulation layer in such sequential order. A light emitting device having the multi-layered tunnel junction structure and a production method of such light emitting device are also disclosed.