Company Filing History:
Years Active: 2008
Title: Shih-Shian Ho: Innovator in Ferroelectric Film Technology
Introduction
Shih-Shian Ho is a prominent inventor based in Taipei, Taiwan. He is known for his significant contributions to the field of materials science, particularly in the development of methods for manufacturing advanced electronic components. His innovative approach has led to the creation of a patented technology that enhances the performance of ferroelectric films.
Latest Patents
Shih-Shian Ho holds a patent titled "Method for manufacturing bonded wafer with ultra-thin single crystal ferroelectric film." This patent describes a method that involves several key steps. First, a single crystal ferroelectric wafer and a carrier wafer are provided while activating their surfaces. Next, the activated surface of the single crystal ferroelectric wafer is bonded to the activated surface of the carrier wafer. Finally, the single crystal ferroelectric wafer is thinned to form an ultra-thin single crystal ferroelectric film. The thinning process can include polishing, grinding, chemical mechanical polishing, or etching. The bonding force generated during this process is strong enough to resist shearing forces, making it a robust solution for electronic applications.
Career Highlights
Shih-Shian Ho is affiliated with the Industrial Technology Research Institute, where he has been instrumental in advancing research and development in ferroelectric materials. His work has not only contributed to academic knowledge but has also had practical implications in the electronics industry.
Collaborations
Shih-Shian Ho collaborates with talented colleagues, including Hung-Yin Tsai and Chia-Jen Ting, who contribute to the research and development efforts in their field. Their teamwork fosters innovation and enhances the quality of their projects.
Conclusion
Shih-Shian Ho's innovative methods for manufacturing ultra-thin single crystal ferroelectric films represent a significant advancement in materials science. His contributions continue to influence the development of high-performance electronic devices.
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