The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2008
Filed:
Nov. 02, 2004
Shih-shian Ho, Taipei, TW;
Hung-yin Tsai, Hsinchu, TW;
Chia-jen Ting, Taoyuan, TW;
Chun-fa Lan, Hsinchu, TW;
Chii-chang Chen, Pingzhen, TW;
Shih-Shian Ho, Taipei, TW;
Hung-Yin Tsai, Hsinchu, TW;
Chia-Jen Ting, Taoyuan, TW;
Chun-Fa Lan, Hsinchu, TW;
Chii-Chang Chen, Pingzhen, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method for manufacturing a bonded wafer with ultra-thin single crystal ferroelectric film is provided, comprising the following steps: providing a single crystal ferroelectric wafer and a carrier wafer while activating the surfaces of the single crystal ferroelectric wafer and the carrier wafer; bonding the activated surface of the single crystal ferroelectric wafer to the activated surface of the carrier wafer; and thinning the single crystal ferroelectric wafer for forming an ultra-thin single crystal ferroelectric film. Wherein, the thinning process in the aforesaid preferred embodiment is the method of polishing, grinding, chemical mechanical polishing, or etching. And the bonding force generated in the bonding process is strong enough to resist the shearing force.