This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Taiwan Semiconcutor Manufacturing Company, Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Shih-Hao Lo and Semiconductor Gate Technology
Introduction
Shih-Hao Lo is an inventor associated with Zhubei City, Taiwan. Lo is credited with 1 patent concerning gate structures used in high-κ metal gate technology.
Latest Patents
Lo’s patent, “Gate Structure in High-κ Metal Gate Technology,” describes an integrated chip with a gate dielectric structure on a semiconductor substrate and a gate electrode above it. The electrode includes a lower conductive structure and a gate body with an upper segment over the lower structure and a lower segment between its opposing inner sidewalls. This arrangement describes one approach to forming a gate structure in semiconductor devices.
Career Highlights
The patent record associates Lo with Taiwan Semiconductor Manufacturing Company, Ltd. The disclosed invention focuses on the structure of a semiconductor gate electrode and its relationship to the gate dielectric.
Collaborations
The provided information lists Wei Cheng Wu and Alexander Kalnitsky as Lo’s coworkers. Their specific roles in the patent or related work are not stated.
Conclusion
Shih-Hao Lo’s recorded patent addresses the design of a gate structure for high-κ metal gate technology, reflecting a contribution to semiconductor device engineering.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile