Shih Chiung Chen

Title: Innovations of Shih Chiung Chen in Semiconductor Technology

Introduction

Shih Chiung Chen is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods that enhance the performance and reliability of flash memory devices.

Latest Patents

One of his key patents is titled "Method of forming tiny silicon nitride spacer for flash EPROM by fully wet etching technology." This innovative method addresses critical issues in split-gate flash EPROMs, such as preventing 'write disturb' and unwanted reverse tunneling. The technique involves forming small silicon nitride spacers with precise dimensions and shapes through a fully wet etch process. By utilizing a phosphoric acid solution in combination with sulfuric acid and hydrogen peroxide, the process window is significantly widened, allowing for better control over the dimensions of the spacers than previously possible.

Career Highlights

Shih Chiung Chen is associated with Taiwan Semiconductor Manufacturing Company Ltd., a leading player in the semiconductor industry. His work has been instrumental in advancing the manufacturing processes of flash memory technologies, contributing to the overall efficiency and effectiveness of semiconductor devices.

Collaborations

He has collaborated with notable colleagues, including Hung-Hsin Liu and Kuei-Jen Chang, who have also contributed to the advancements in semiconductor technology.

Conclusion

Shih Chiung Chen's innovative methods in semiconductor technology exemplify the importance of precision in manufacturing processes. His contributions continue to influence the development of reliable and efficient flash memory devices.