Shih-Chi Hsu

Title: Innovations of Shih-Chi Hsu

Introduction

Shih-Chi Hsu is a notable inventor based in Chung-Li, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for isolating interconnects and fabricating DRAM capacitors. With a total of two patents to his name, Hsu's work has had a considerable impact on the industry.

Latest Patents

Hsu's latest patents include innovative methods for isolating interconnects. This invention provides techniques for isolating the top and bottom interconnects using an inter-metal dielectric (IMD) made of traditional low-k dielectric material. The process involves dissolving the low-k material with a suitable solvent and utilizing air or a noble gas to achieve isolation. Another significant patent is a method for fabricating a DRAM capacitor. This method begins with a semiconductor substrate that has a capacitor contact. A first polysilicon layer is formed, followed by the sequential formation of an oxide layer and a silicon oxy-nitride layer. The layers are selectively etched to create a rectangular stack layer, which is further processed to form a double T-shaped stack layer. The remaining layers are then used to create the bottom electrode, onto which a dielectric layer and an upper electrode are formed.

Career Highlights

Shih-Chi Hsu is currently employed at Nan Ya Technology Corporation, where he continues to innovate in semiconductor technologies. His work has been instrumental in advancing the capabilities of DRAM capacitors and interconnects, which are critical components in modern electronic devices.

Collaborations

Hsu collaborates with talented coworkers, including Tse Yao Huang and Yinan Chen, who contribute to the innovative environment at Nan Ya Technology Corporation.

Conclusion

Shih-Chi Hsu's contributions to semiconductor technology through his patents and work at Nan Ya Technology Corporation highlight his role as a key innovator in the field. His methods for isolating interconnects and fabricating DRAM capacitors are paving the way for advancements in electronic device performance.