This inventor holds 1 USPTO granted patent. Top assignee: Vanguard International Semiconductor Corporation. Active years: 2010.
Company Filing History:
Years Active: 2010
Title: Shih-Chan Chen: Innovator in Semiconductor Technology
Introduction
Shih-Chan Chen is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.
Latest Patents
Shih-Chan Chen holds a patent titled "Method for increasing breaking down voltage of lateral diffused metal oxide semiconductor transistor." This invention involves a lateral diffused metal oxide semiconductor transistor that features a p-type bulk disposed on a substrate, with an n-type well region situated within the p-type bulk. The design includes multiple field oxide layers on both the p-type bulk and the n-type well region, along with a gate structure positioned on a portion of the p-type bulk and one of the field oxide layers. Additionally, at least one deep trench isolation structure is integrated into the p-type bulk, adjacent to the n-type well region. This patent showcases his expertise in enhancing the performance of semiconductor devices.
Career Highlights
Shih-Chan Chen is currently employed at Vanguard International Semiconductor Corporation, where he continues to advance his research and development efforts in semiconductor technology. His work has been instrumental in pushing the boundaries of what is possible in this field.
Collaborations
Shih-Chan Chen has collaborated with notable colleagues, including Kwang-Ming Lin and Shih-Chieh Pu, who contribute to the innovative environment at Vanguard International Semiconductor Corporation.
Conclusion
Shih-Chan Chen's contributions to semiconductor technology through his patent and work at Vanguard International Semiconductor Corporation highlight his role as a key innovator in the industry. His advancements continue to influence the development of more efficient semiconductor devices.