Yokohama, Japan

Shigeru Miyakawa

This inventor holds 1 USPTO granted patent. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1991.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shigeru Miyakawa. Retrieved from https://idiyas.com/inventor/shigeru-miyakawa-5s2om0b3

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 10.0

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 1991

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1 patent (USPTO):Explore Patents

Title: Shigeru Miyakawa: Innovator in Semiconductor Manufacturing

Introduction

Shigeru Miyakawa is a notable inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor manufacturing. His innovative methods have paved the way for advancements in technology.

Latest Patents

Miyakawa holds a patent for a method of manufacturing a semiconductor device. This method involves a ceramics cylinder, a metal seal member, and a semiconductor element. The process includes coating the ceramics cylinder with active metal powder, applying a layer of brazing filler metal, and heating the assembly to create a secure bond.

Career Highlights

Miyakawa is associated with Kabushiki Kaisha Toshiba, a leading company in technology and electronics. His work has been instrumental in enhancing the efficiency and reliability of semiconductor devices. He has demonstrated a commitment to innovation throughout his career.

Collaborations

Miyakawa has collaborated with notable coworkers, including Masako Nakahashi and Mitsutaka Homma. Their combined expertise has contributed to the success of various projects within the company.

Conclusion

Shigeru Miyakawa's contributions to semiconductor manufacturing exemplify the spirit of innovation. His patent and work at Toshiba highlight the importance of advancements in technology. His efforts continue to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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