This inventor holds 1 USPTO granted patent. Top assignee: Ricoh Company, Ltd.. Active years: 1991.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1991
Title: Shigemi Sasada: Innovator in Semiconductor Memory Technology
Introduction
Shigemi Sasada is a notable inventor based in Takarazuka, Japan. She has made significant contributions to the field of semiconductor technology, particularly in the development of memory devices. Her innovative work has led to the creation of a unique semiconductor memory device that utilizes high-density and high-speed MOS transistors.
Latest Patents
Sasada holds a patent for a semiconductor memory device that employs MOS transistors. This device features diffusion lines and polysilicon lines formed on a semiconductor substrate. The design includes first and second insulating films that cover the diffusion lines and polysilicon lines, respectively. The diffusion lines are arranged parallel to each other and constitute the bit lines of the memory device. The polysilicon lines intersect these diffusion lines and form the word lines. Metal wiring lines are strategically positioned to connect with the diffusion lines, enhancing the device's efficiency. This innovative arrangement allows for a higher density of MOS transistors without compromising the operational speed of the device. She has 1 patent to her name.
Career Highlights
Shigemi Sasada is currently associated with Ricoh Company, Ltd., where she continues to advance her research in semiconductor technologies. Her work has been instrumental in pushing the boundaries of memory device capabilities, making significant strides in the industry.
Collaborations
Sasada has collaborated with notable colleagues, including Kunio Matsudaira and Keiji Fukumura. These partnerships have fostered an environment of innovation and creativity, contributing to the success of her projects.
Conclusion
Shigemi Sasada's contributions to semiconductor memory technology exemplify her dedication to innovation and excellence. Her patent for a high-density and high-speed MOS semiconductor memory device showcases her ability to enhance technology while maintaining performance. Her work continues to influence the field and inspire future advancements.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
