Hitachi, Japan

Shigeki Ono

This inventor holds 1 USPTO granted patent. Top assignee: Hitachi, Ltd.. Active years: 1998.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shigeki Ono. Retrieved from https://idiyas.com/inventor/shigeki-ono-qmv03nzy

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 1998

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1 patent (USPTO):Explore Patents

Title: Shigeki Ono: Innovator in Thermal Working Methods

Introduction: Shigeki Ono is a notable inventor based in Hitachi, Japan. He has made significant contributions to the field of thermal working methods for metal materials. His innovative approach focuses on improving the structural integrity of metals containing helium.

Latest Patents: Ono holds 1 patent for a thermal working method of metal material containing helium. This patent describes a method that involves feeding current through a thermally working portion of the metal material to reduce helium content without melting the material. The process enhances the defects of the metal structure, leading to improved performance and durability.

Career Highlights: Throughout his career, Ono has been dedicated to advancing metalworking techniques. His work has been instrumental in addressing challenges associated with helium in metal materials. His innovative methods have the potential to revolutionize how metals are processed in various industries.

Collaborations: Ono has collaborated with esteemed colleagues such as Takahiko Kato and Hideyo Kodama. Their combined expertise has contributed to the development of advanced thermal working techniques.

Conclusion: Shigeki Ono's contributions to thermal working methods highlight his role as a key innovator in the field. His patent demonstrates a significant advancement in metal processing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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