Hitachi, Japan

Shigeharu Nonoyama

This inventor holds 1 USPTO granted patent. Top assignee: Hitachi, Ltd.. Active years: 2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shigeharu Nonoyama. Retrieved from https://idiyas.com/inventor/shigeharu-nonoyama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2002

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1 patent (USPTO):Explore Patents

Title: Shigeharu Nonoyama: Innovator in Semiconductor Technology

Introduction

Shigeharu Nonoyama is a prominent inventor based in Hitachi, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor module and inverter device.

Latest Patents

Nonoyama holds a patent for a semiconductor module that includes a semiconductor element, an electrically insulating base, and an electrically insulating cover. This design ensures that parts of the electrically conductive members are isolated from the grounded surface, enhancing the device's efficiency and safety. His patent is a testament to his expertise in creating advanced electronic components.

Career Highlights

Throughout his career, Nonoyama has been associated with Hitachi, Ltd., a leading company in technology and innovation. His work has been instrumental in advancing semiconductor applications, which are crucial for various electronic devices.

Collaborations

Nonoyama has collaborated with notable colleagues, including Ryuichi Saito and Yoshihiko Koike. These partnerships have fostered a creative environment that has led to groundbreaking advancements in semiconductor technology.

Conclusion

Shigeharu Nonoyama's contributions to semiconductor technology exemplify his innovative spirit and dedication to advancing the field. His patent reflects a significant achievement that enhances the functionality and safety of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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