Company Filing History:
Years Active: 2014
Title: Innovations of Shiang-Wen Huang
Introduction
Shiang-Wen Huang is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of power LDMOS devices and high voltage devices. With a total of two patents to his name, Huang's work showcases his expertise and innovative spirit.
Latest Patents
Huang's latest patents include a Power LDMOS device and a RESURF structure for LDMOS devices. The Power LDMOS device features a substrate with distinct areas, including a finger tip area, a finger body area, and a palm area. The design incorporates source and drain regions that are strategically placed to enhance performance. The RESURF structure, on the other hand, includes a substrate of a first conductivity type and a deep well region of a second conductivity type, along with various insulating and doped regions to optimize the device's functionality.
Career Highlights
Huang is currently employed at Episil Technologies Inc., where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in advancing the capabilities of LDMOS devices, which are crucial for various electronic applications.
Collaborations
Huang collaborates with talented individuals such as Chung-Yeh Lee and Pei-Hsun Wu, who contribute to the innovative environment at Episil Technologies Inc. Their combined expertise fosters a culture of creativity and technological advancement.
Conclusion
Shiang-Wen Huang's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence the development of advanced electronic devices.