Shiang-Pi Chang

Title: Shiang-Pi Chang: Innovator in Semiconductor Technology

Introduction

Shiang-Pi Chang is a prominent inventor based in Taipei Hsien, Taiwan, recognized for his groundbreaking contributions to semiconductor technology. His innovative approach has led to the development of advanced methods vital for enhancing semiconductor devices.

Latest Patents

Shiang-Pi Chang holds a significant patent titled "Method for forming a semiconductor device having a structure of a single crystal scandium oxide film formed on a silicon substrate." This invention describes a method that involves placing a silicon substrate and a scandium oxide powder source in an oxide chamber. The process includes vaporizing the scandium oxide powder in the chamber, allowing for the formation of a single crystal scandium oxide film on the silicon substrate through electron beam evaporation techniques.

Career Highlights

Shiang-Pi Chang is affiliated with National Tsing Hua University, where his research and innovations play a critical role in advancing semiconductor technology. His dedication to the field has positioned him as a key figure in the exploration of new materials and techniques applicable within the semiconductor industry.

Collaborations

Throughout his career, Shiang-Pi Chang has collaborated with distinguished colleagues, including Ming-Hwei Hong and Jueinai Kwo. These collaborations foster a productive research environment that aims to push the boundaries of semiconductor technology and its applications.

Conclusion

With his innovative methodology and commitment to excellence, Shiang-Pi Chang continues to be an influential inventor in the semiconductor domain. His contributions not only enhance the capabilities of semiconductor devices but also lay the groundwork for future advancements in the field.