The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2007
Filed:
Apr. 27, 2006
Applicants:
Ming-hwei Hong, Hsinchu, TW;
Jueinai Kwo, Hsinchu, TW;
Chih-ping Chen, Hsinchu, TW;
Shiang-pi Chang, Taipei Hsien, TW;
Wei-chin Lee, Taipei, TW;
Inventors:
Ming-Hwei Hong, Hsinchu, TW;
Jueinai Kwo, Hsinchu, TW;
Chih-Ping Chen, Hsinchu, TW;
Shiang-Pi Chang, Taipei Hsien, TW;
Wei-Chin Lee, Taipei, TW;
Assignee:
National Tsing Hua University, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a semiconductor device includes placing a Si substrate and an ScOpowder source in an oxide chamber, and vaporizing the ScOpowder source in the oxide chamber so as to form a single crystal ScOfilm on the Si substrate through electron beam evaporation techniques.