Singapore, Singapore

Shi Wun Tong

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Agency for Science, Technology and Research. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shi Wun Tong. Retrieved from https://idiyas.com/inventor/shi-wun-tong

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 5.8

ph-index = 1


Company Filing History:


Years Active: 2025

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2 patents (USPTO):Explore Patents

Title: Innovations of Shi Wun Tong in Resistive Memory Devices

Introduction

Shi Wun Tong is an accomplished inventor based in Singapore, known for his contributions to the field of resistive memory devices. With a focus on advanced materials, he has developed innovative structures that enhance memory technology.

Latest Patents

Shi Wun Tong holds a patent for a "Resistive memory device structure based on stacked layers of nanocrystalline TMDCs." This patent describes a multilayered structure that includes one or more nanocrystalline layers made of transition metal dichalcogenides and one or more substantially amorphous electrically insulating layers made of transition metal oxides. The unique arrangement of these layers allows for improved performance in resistive memory devices.

Career Highlights

Shi Wun Tong is affiliated with the Agency for Science, Technology and Research, where he continues to push the boundaries of memory technology. His work has garnered attention for its potential applications in next-generation electronic devices.

Collaborations

Shi has collaborated with notable colleagues, including Henry Medina Silva and Dongzhi Chi, who contribute to the innovative research environment in which he works.

Conclusion

Shi Wun Tong's contributions to resistive memory devices exemplify the innovative spirit of modern technology. His work not only advances the field but also paves the way for future developments in memory technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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