Shanghai, China

Shi Jingping

This inventor holds 2 USPTO granted patents. Top assignee: Diodes Inc.. Active years: 2006-2007.


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 2

Forward Citations = 28(Granted Patents)


Company Filing History:


Years Active: 2006-2007

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2 patents (USPTO):Explore Patents

Title: Innovations of Shi Jingping in Semiconductor Technology

Introduction

Shi Jingping is a notable inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology. With a total of 2 patents, his work focuses on enhancing the functionality and efficiency of semiconductor devices.

Latest Patents

One of Shi Jingping's latest patents is a semiconductor device featuring an interlocking clip. This innovative device includes a single-piece clip that interlocks into a lead frame. The design utilizes one or more forks on the clip that mate with corresponding slots in the lead frame. A semiconductor die is mounted to a pad of the lead frame, and the clip couples the die to a conductive lead of the lead frame. The interlocking coupling forms a lever that allows for the adjustment of the clip's position relative to the semiconductor die. The interference between the clip fork and the corresponding slot confines the lever motion, allowing for precise pivoting of the clip. This design enhances the overall functionality of the semiconductor device.

Career Highlights

Shi Jingping is currently employed at Diodes Incorporated, where he continues to innovate in semiconductor technology. His work has been instrumental in developing advanced semiconductor solutions that meet the demands of modern electronics.

Collaborations

Shi collaborates with Tan Xiaochun, a talented coworker who contributes to the innovative projects at Diodes Incorporated.

Conclusion

Shi Jingping's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of efficient semiconductor devices.

Profile summary based on public USPTO records.
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