Shi-Ho Kim

Title: Shi-Ho Kim: Innovator in Nonvolatile Ferroelectric Memory Technology

Introduction

Shi-Ho Kim is a prominent inventor based in Taejon, South Korea. He has made significant contributions to the field of memory technology, particularly through his innovative work on nonvolatile ferroelectric memory systems. His research focuses on enhancing the efficiency and longevity of memory devices.

Latest Patents

Shi-Ho Kim holds a patent for a nonvolatile ferroelectric memory that reduces the number of cycles of reference cells to extend the lifetime of memory. This invention activates a reference cell to provide a reference voltage to a sense amplifier only when needed. The memory comprises a matrix of cells, including memory and reference cells, along with sense amplifiers that compare voltages to read information stored in the selected memory cell. Each reference cell is activated only when both a selection signal from a column address and a word line connected to the reference cell are enabled. This innovative approach significantly improves the performance and durability of memory systems.

Career Highlights

Shi-Ho Kim is associated with the Electronics and Telecommunications Research Institute, where he has been instrumental in advancing memory technology. His work has garnered attention for its practical applications and potential to revolutionize data storage solutions.

Collaborations

Shi-Ho Kim has collaborated with notable colleagues, including Byoung-Gon Yu and Won-Jae Lee. Their combined expertise has contributed to the success of various projects within the institute.

Conclusion

Shi-Ho Kim's contributions to nonvolatile ferroelectric memory technology highlight his role as an influential inventor in the field. His innovative approaches continue to pave the way for advancements in memory systems, ensuring greater efficiency and longevity in data storage.