This inventor holds 1 USPTO granted patent. Top assignee: Mostek Corporation. Active years: 1985.
Company Filing History:
Years Active: 1985
Title: Sheppard Douglas P: Innovator in MOS Technology
Introduction
Sheppard Douglas P is a notable inventor based in Grapevine, TX (US). He has made significant contributions to the field of integrated circuits, particularly in the development of methods that enhance the performance of MOS read-only memory (ROM). His innovative approach has implications for power consumption and speed in electronic devices.
Latest Patents
Sheppard Douglas P holds a patent for a method of making MOS read-only memory by specified double implantation. This patent describes a technique where the power consumption and corresponding speed of an integrated circuit are optimized by adjusting the channel width for MOS transistors. The process involves initially fabricating a transistor with a channel that receives a depletion type implant to create a lightly depleted state. An enhancement implant is then applied to a selected area of the channel, resulting in varying threshold voltages that allow for controlled scaling of the source-drain current and power consumption.
Career Highlights
Throughout his career, Sheppard Douglas P has been associated with Mostek Corporation, where he has contributed to advancements in semiconductor technology. His work has been instrumental in improving the efficiency of integrated circuits, making them more suitable for modern applications.
Collaborations
Due to space constraints, the details of collaborations will not be included.
Conclusion
Sheppard Douglas P's innovative methods in MOS technology demonstrate his commitment to enhancing electronic performance. His contributions continue to influence the field of integrated circuits and pave the way for future advancements.