Company Filing History:
Years Active: 2016
Title: Innovations of Shengrong Zong in Power Diode Technology.
Introduction
Shengrong Zong is a notable inventor based in Wuxi New District, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of power diodes. His innovative methods have the potential to enhance the efficiency and performance of electronic devices.
Latest Patents
Shengrong Zong holds a patent for a method for preparing a power diode. This method involves several intricate steps, including providing a substrate, growing an N-type layer on the substrate's front surface, and forming a terminal protecting ring. The process also includes the formation of an oxide layer, gate oxide layer, and poly-silicon layer, along with various doping and annealing techniques. By adjusting the isotropy etching level of the SiO layer and the ion implanting dose and energy, the threshold voltage of a DMOS structure can be fine-tuned, leading to improved forward voltage drop characteristics for the device.
Career Highlights
Shengrong Zong is currently employed at CSMC Technologies Fab1 Co., Ltd. His work at this company has allowed him to focus on advancing semiconductor technologies and contributing to the development of innovative solutions in the industry.
Collaborations
Throughout his career, Shengrong Zong has collaborated with talented individuals such as Genyi Wang and Xiaoshe Deng. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.
Conclusion
Shengrong Zong's contributions to power diode technology exemplify the importance of innovation in the semiconductor industry. His patented methods and collaborative efforts continue to pave the way for advancements in electronic device performance.