Dresden, Germany

Shengqiang Zhou

This inventor holds 1 USPTO granted patent. Top assignee: Helmholtz-Zentrum Dresden-Rossendorf E.v.. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shengqiang Zhou. Retrieved from https://idiyas.com/inventor/shengqiang-zhou

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Innovations of Shengqiang Zhou in Non-Volatile Memory Technology

Introduction

Shengqiang Zhou is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of non-volatile memory technology. His innovative work has led to the development of a unique patent that enhances the functionality of integrated memory components.

Latest Patents

Shengqiang Zhou holds a patent titled "Integrated non-volatile memory elements, design and use." This patent describes various embodiments of an integrated non-volatile component. The component includes a surface contact with an associated mating contact, wherein a ferroelectric layer is utilized as a conductive channel with variable conductivity. The design allows for the formation of a non-volatile space charge zone in the ferroelectric layer, enhancing the performance of memory elements.

Career Highlights

Shengqiang Zhou is affiliated with the Helmholtz-Zentrum Dresden-Rossendorf e.V., where he conducts research and development in advanced memory technologies. His work has been instrumental in pushing the boundaries of what is possible in non-volatile memory systems.

Collaborations

He has collaborated with notable colleagues, including Yao Shuai and Ilona Skorupa, contributing to various projects that aim to advance memory technology.

Conclusion

Shengqiang Zhou's innovative contributions to non-volatile memory technology exemplify the impact of dedicated research and development in the field. His patent and collaborative efforts continue to influence advancements in memory systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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