This inventor holds 1 USPTO granted patent. Top assignee: Chinese Academy of Sciences. Active years: 2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2025
Title: Innovations of Shengnan Ban in Fault Model Evaluation
Introduction
Shengnan Ban is an accomplished inventor based in Wuhan, China. He has made significant contributions to the field of fault model evaluation, particularly through his innovative patent. His work focuses on methods and devices that enhance the understanding of sealing performance in geological formations.
Latest Patents
Shengnan Ban holds a patent titled "Method and device for making physical fault model and empirically evaluating sealing performance." This patent outlines a comprehensive method for creating a physical fault model and empirically assessing its sealing capabilities. The process involves several steps, including preparing a fault filling zone model, testing its initial permeability, and conducting sealing experiments using nano-microsphere infused slurry. The method aims to provide a reliable evaluation of sealing performance, which is crucial in various geological applications.
Career Highlights
Shengnan Ban is affiliated with the Chinese Academy of Sciences, where he conducts research and development in the field of geological engineering. His expertise in fault modeling and sealing performance has positioned him as a key figure in his area of study. With a focus on empirical evaluation, his work contributes to advancements in geological assessments and resource management.
Collaborations
Shengnan Ban collaborates with notable colleagues, including Yintong Guo and Xiaosong Qiu. Their combined efforts enhance the research output and innovation within their projects, fostering a collaborative environment that drives scientific progress.
Conclusion
Shengnan Ban's innovative work in fault model evaluation exemplifies the importance of empirical methods in geological research. His contributions through patents and collaborations continue to influence the field positively.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
