Company Filing History:
Years Active: 2006
Title: Innovations of Shengkun Zhang in Photodetector Technology
Introduction
Shengkun Zhang is an accomplished inventor based in Ridgewood, NY (US). He has made significant contributions to the field of photodetector technology, particularly through his innovative designs and patents. His work focuses on enhancing the efficiency and functionality of photodetectors and optically pumped emitters.
Latest Patents
Shengkun Zhang holds a patent for "Photodetectors and optically pumped emitters based on III-nitride multiple-quantum-well structures." This patent discloses the design and operation of a p-i-n device that operates under sequential resonant tunneling conditions. The device is engineered for use as both a photodetector and an optically pumped emitter. It features III-nitride multiple-quantum-well (MQW) layers situated between a III-nitride p-n junction. The transparent ohmic contacts on both the p and n sides facilitate its operation. The device is designed to work under specific electrical biases, aligning the energy levels of the first excitation state in each well layer with the ground state in the adjoining well layer. This innovative design allows the device to function as a high-efficiency and high-speed photodetector, with photo-generated carriers being transported through the active MQW region via sequential resonant tunneling. Additionally, in this condition, the device serves as an optically pumped infrared emitter, producing infrared photons that correspond to the energy difference between the first excitation state and the ground state in the MQWs.
Career Highlights
Shengkun Zhang is affiliated with the City University of New York, where he continues to advance his research and development in photodetector technology. His work has garnered attention for its potential applications in various fields, including telecommunications and sensor technology.
Collaborations
Shengkun Zhang has collaborated with notable colleagues, including Robert R. Alfano and Wubao Wang. Their combined expertise has contributed to the advancement of research in photodetector technology.
Conclusion
Shengkun Zhang's innovative work in photodetector technology exemplifies the potential of III-nitride multiple-quantum-well structures. His contributions are paving the way for advancements in high-efficiency photodetectors and optically pumped emitters.