Shengbao Lai

Title: Innovations of Shengbao Lai in Photocatalysis and Device Fabrication

Introduction

Shengbao Lai is a prominent inventor based in Guangzhou, China. He has made significant contributions to the fields of photocatalysis and device fabrication. With a total of 2 patents, his work focuses on innovative methods and materials that enhance hydrogen production and device functionality.

Latest Patents

One of Shengbao Lai's latest patents is titled "Silicon carbide (SiC)-loaded graphene photocatalyst for hydrogen production under visible light irradiation and preparation thereof." This application discloses a method for creating a silicon carbide (SiC)-loaded graphene photocatalyst that improves hydrogen production efficiency under visible light. The process involves preparing pure SiC and black carbon, mixing them, and applying a current pulse to form a heterojunction that enhances catalytic activity.

Another notable patent is "Film vibration device and fabrication method thereof, and cleaning device including the same." This invention outlines a method for fabricating a film vibration device using a silicon wafer and various materials to create micro-structures. The device is designed to improve functionality in various applications, including cleaning devices.

Career Highlights

Shengbao Lai is affiliated with the Guangdong University of Technology, where he continues to engage in research and development. His innovative work has garnered attention in the academic and industrial sectors, contributing to advancements in technology.

Collaborations

Shengbao Lai collaborates with notable colleagues, including Yun Chen and Biao Li. Their combined expertise fosters a productive research environment that drives innovation.

Conclusion

Shengbao Lai's contributions to photocatalysis and device fabrication exemplify the impact of innovative thinking in technology. His patents reflect a commitment to advancing scientific knowledge and practical applications.