Lakewood, CO, United States of America

Shengbai Zhang

This inventor holds 1 USPTO granted patent. Top assignee: Midwest Research Institute. Active years: 2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shengbai Zhang. Retrieved from https://idiyas.com/inventor/shengbai-zhang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 12(Granted Patents)


Company Filing History:


Years Active: 2005

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1 patent (USPTO):Explore Patents

Title: The Innovations of Shengbai Zhang

Introduction

Shengbai Zhang is a notable inventor based in Lakewood, Colorado. He has made significant contributions to the field of transparent conducting oxides. His work focuses on enhancing the properties of these materials for various applications.

Latest Patents

Shengbai Zhang holds a patent for "High carrier concentration p-type transparent conducting oxide films." This invention involves a p-type transparent conducting oxide film that consists essentially of a transparent conducting oxide and a molecular doping source. The oxide and doping source are grown under conditions sufficient to deliver the doping source intact onto the oxide. This innovation has the potential to improve the efficiency of electronic devices.

Career Highlights

Shengbai Zhang is affiliated with the Midwest Research Institute, where he continues to advance research in materials science. His work has garnered attention for its practical applications in technology and engineering.

Collaborations

Shengbai Zhang collaborates with fellow researcher Yanfa Yan, contributing to the advancement of their shared field of study.

Conclusion

Shengbai Zhang's innovative work in transparent conducting oxides exemplifies the impact of research on technology. His contributions are paving the way for future advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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