This inventor holds 1 USPTO granted patent. Top assignee: The University of Alabama. Active years: 2009.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2009
Title: Innovations of Sheng-Yuan Wang in Memory Technology
Introduction
Sheng-Yuan Wang is a notable inventor based in Milpitas, CA (US). He has made significant contributions to the field of memory technology, particularly through his innovative work on toggle-MRAM devices. His expertise and research have led to advancements that enhance the performance of memory systems.
Latest Patents
Wang holds a patent for an "Enhanced toggle-MRAM memory device." This device utilizes a synthetic anti-ferromagnet (SAF) composite, which substantially lowers the operating field while maintaining a wide operating field margin and high thermal stability. The specific magnetic parameters employed in this device contribute to its improved performance, especially in terms of large operating field margins and high thermal stability characteristics, all while operating with low current.
Career Highlights
Sheng-Yuan Wang is affiliated with the University of Alabama, where he continues to push the boundaries of memory technology. His work has garnered attention for its potential applications in various electronic devices, making him a key figure in the research community.
Collaborations
Wang collaborates with Hideo Fujiwara, further enhancing the scope and impact of his research endeavors.
Conclusion
Sheng-Yuan Wang's contributions to toggle-MRAM technology exemplify the innovative spirit of modern inventors. His work not only advances memory technology but also sets the stage for future developments in the field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile