Hsinchu, Taiwan

Sheng-Jun Chuang

This inventor holds 1 USPTO granted patent. Top assignee: Ali Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sheng-Jun Chuang. Retrieved from https://idiyas.com/inventor/sheng-jun-chuang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Innovations of Sheng-Jun Chuang

Introduction

Sheng-Jun Chuang is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of electrostatic discharge protection devices. His work is characterized by innovative designs that enhance the reliability and safety of electronic components.

Latest Patents

Sheng-Jun Chuang holds a patent for an electrostatic discharge protection device. This device includes a first-type semiconductor substrate, a first diode with a first first-type well and a first second-type well, and a second diode with a second first-type well and a second second-type well. The design features a first isolation structure and a second isolation structure, ensuring effective protection against electrostatic discharge. The upper surface of the first-type semiconductor substrate is divided into regions for the diodes, with isolation structures strategically placed to enhance functionality. He has 1 patent to his name.

Career Highlights

Chuang is currently associated with Ali Corporation, where he continues to develop innovative solutions in semiconductor technology. His expertise in electrostatic discharge protection has positioned him as a valuable asset in the industry.

Collaborations

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Conclusion

Sheng-Jun Chuang's contributions to electrostatic discharge protection devices reflect his commitment to innovation in semiconductor technology. His work continues to influence the field and enhance the safety of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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