Zhongli, Taiwan

Shen-Kan Hsung

This inventor holds 1 USPTO granted patent. Top assignee: Chung Yuan Christian University. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shen-Kan Hsung. Retrieved from https://idiyas.com/inventor/shen-kan-hsung

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2011

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Innovations of Shen-Kan Hsung

Introduction

Shen-Kan Hsung is a notable inventor based in Jhongli, Taiwan. He has made significant contributions to the field of sensor technology, particularly in the area of drift calibration methods.

Latest Patents

One of his key patents is titled "Drift calibration method and device for the potentiometric sensor." This invention discloses a method and apparatus for the drift calibration of sensors. The method involves shifting the sensing signal and employing differential technology to eliminate drift signals over extended measurement periods. The apparatus consists of two voltage sensors, readout circuits, a signal-shifting circuit, and a differential circuit, which collectively output response signals without time drifting. He holds 1 patent related to this innovative technology.

Career Highlights

Shen-Kan Hsung is affiliated with Chung Yuan Christian University, where he continues to advance research in sensor technologies. His work has garnered attention for its practical applications in various industries.

Collaborations

He has collaborated with notable colleagues, including Jung-Chuan Chou and Tai-Ping Sun, contributing to the advancement of sensor technology through teamwork and shared expertise.

Conclusion

Shen-Kan Hsung's innovative work in drift calibration methods for sensors showcases his commitment to enhancing sensor technology. His contributions are valuable to both academic and practical applications in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…