Teaneck, NJ, United States of America

Sheldon M Kugelmass

This inventor holds 1 USPTO granted patent. Top assignee: Lepton Inc.. Active years: 1995.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sheldon M Kugelmass. Retrieved from https://idiyas.com/inventor/sheldon-m-kugelmass-v2wsxjfb

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 1995

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1 patent (USPTO):Explore Patents

Title: Sheldon M Kugelmass: Innovator in Lithographic Technology

Introduction

Sheldon M Kugelmass is a notable inventor based in Teaneck, NJ (US). He has made significant contributions to the field of lithographic technology, particularly through his innovative patent.

Latest Patents

Kugelmass holds a patent for a "Lithographic electron-beam exposure apparatus and methods." This invention involves an apparatus designed to expose a radiation-sensitive workpiece to define patterns. The apparatus includes an electron gun, a mask with spaced apertures for passing electron radiation, and a radiation deflector-blanker. This technology directs radiation to selected apertures, forming separate beamlets that are demagnified and directed onto the workpiece without crossing them. In one embodiment, the groups of apertures are fixed on the mask, defining fixed undivided profiles in the path of the radiation.

Career Highlights

Sheldon M Kugelmass is associated with Lepton Inc., where he applies his expertise in lithographic technology. His work has contributed to advancements in the field, showcasing his innovative spirit and technical knowledge.

Collaborations

Kugelmass has collaborated with Martin P Lepselter, further enhancing his contributions to the industry.

Conclusion

Sheldon M Kugelmass is a distinguished inventor whose work in lithographic technology has paved the way for advancements in electron-beam exposure methods. His innovative patent reflects his commitment to pushing the boundaries of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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