Shaun-Tsung Yu

Title: Shaun-Tsung Yu: Innovator in Semiconductor Manufacturing

Shaun-Tsung Yu is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative patent. His work focuses on improving the processes involved in integrated circuit fabrication.

Latest Patents

Shaun-Tsung Yu holds a patent for an oxidation method aimed at removing fluorine gas inside polysilicon during the manufacturing of integrated circuit semiconductor devices. This method involves doping polysilicon formed on an N-well in a semiconductor substrate. The process begins with the formation of a silicon oxide layer on the N-well, followed by a blanket polysilicon layer over the silicon oxide layer. The polysilicon layer is then patterned into a specific structure. A sacrificial oxide layer is formed over the polysilicon structure, and ion implantation of ⁴⁹(BF₂)⁺ ions is performed into the N-well and the polysilicon layer. This creates source/drain regions and dopes the polysilicon layer with a P-type dopant, resulting in a doped polysilicon layer. The sacrificial oxide layer is subsequently etched away, and a polyoxide layer is formed over the polysilicon structure, followed by a silicon oxide layer and a glass layer.

Career Highlights

Shaun-Tsung Yu is currently employed at Taiwan Semiconductor Manufacturing Company Ltd. His work has been instrumental in advancing semiconductor technology, and he has been recognized for his innovative approaches to manufacturing processes.

Collaborations

Some of Shaun-Tsung Yu's notable coworkers include Yeh-Jye Wann and An-Min Chiang. Their collaborative efforts contribute to the ongoing advancements in semiconductor manufacturing.

Conclusion

Shaun-Tsung Yu is a key figure in the semiconductor industry, with a focus on innovative manufacturing methods. His contributions, particularly through his patent, have the potential to enhance the efficiency and effectiveness of integrated circuit production.