Shashi Ketan Samal

Title: Innovations by Shashi Ketan Samal

Introduction

Shashi Ketan Samal is a prominent inventor based in San Diego, California. He has made significant contributions to the field of electronics, particularly in the development of advanced FET (Field Effect Transistor) technologies. With a total of four patents to his name, Samal continues to push the boundaries of innovation in his industry.

Latest Patents

Samal's latest patents include groundbreaking technologies such as "Variable width for RF neighboring stacks." This patent describes devices and methods for manufacturing a stack of FET switches, ensuring that the top FET has a width smaller than that of the bottom FET. This innovative design allows for various voltage handling configurations and width distributions. Another notable patent is for "AC coupling modules for bias ladders." This invention features a positive-logic FET switch stack that operates without a negative bias voltage, providing high isolation and low insertion/mismatch loss while withstanding high RF voltages. The embodiments of this patent include a FET stack with series-coupled positive-logic FETs and end-cap FETs that offer selectable capacitive DC blocking functions.

Career Highlights

Shashi Ketan Samal is currently employed at Psemi Corporation, where he applies his expertise in FET technology to develop innovative solutions. His work has significantly impacted the field, and he is recognized for his contributions to the advancement of electronic devices.

Collaborations

Samal collaborates with talented individuals such as Matt Allison and Simon Edward Willard. Their combined efforts contribute to the innovative projects at Psemi Corporation, fostering a creative environment that encourages technological advancements.

Conclusion

Shashi Ketan Samal is a distinguished inventor whose work in FET technology has led to several important patents. His contributions continue to shape the future of electronics, demonstrating the power of innovation in driving progress.