Company Filing History:
Years Active: 2017
Title: Shashank Gupta: Innovator in Semiconductor Technology
Introduction: Shashank Gupta is a prominent inventor based in Stanford, California. He has made significant contributions to the field of semiconductor technology, particularly in the development of low-threshold germanium lasers. His innovative approach combines advanced materials and engineering techniques to enhance the performance of semiconductor devices.
Latest Patents: Gupta holds a patent for a "Crossed nanobeam structure for a low-threshold germanium laser." This invention provides a crossed nanobeam structure for strain engineering in semiconductor devices. The design enables light confinement in a subwavelength volume with minimal optical loss. Additionally, the crossing nanobeam induces high tensile strain in the region where the optical mode is tightly confined. This combination reduces the required pumping to achieve net optical gain beyond cavity losses, paving the way for an extremely low-threshold Ge laser source. The structure is also designed for easy integration into electronic and photonic circuits.
Career Highlights: Gupta is affiliated with Leland Stanford Junior University, where he continues to push the boundaries of semiconductor research. His work has garnered attention for its potential applications in various high-tech industries.
Collaborations: Gupta has collaborated with notable colleagues, including Donguk Nam and Jan A Petykiewicz, to further advance his research and innovations in the field.
Conclusion: Shashank Gupta's contributions to semiconductor technology, particularly through his patented innovations, highlight his role as a leading inventor in the industry. His work promises to influence the future of laser technology and integrated circuits.