SHANGHAI, China

Shaowei Han

This inventor holds 1 USPTO granted patent. Top assignee: Signify Holding B.v.. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shaowei Han. Retrieved from https://idiyas.com/inventor/shaowei-han-xe60kmoz

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Innovations by Shaowei Han in MOSFET Technology

Introduction

Shaowei Han is a notable inventor based in Shanghai, China. He has made significant contributions to the field of electronics, particularly in the development of MOSFET circuits. His innovative work focuses on enhancing the reliability and efficiency of electronic devices.

Latest Patents

Shaowei Han holds 1 patent for a MOSFET circuit designed for use in a tapped linear driver and surge protection method. This patent describes a MOSFET circuit that clamps the gate voltage of a MOSFET when the source voltage exceeds a certain threshold. This mechanism is particularly useful during voltage surge events, providing automatic protection against unwanted increases in input voltage. The circuit ensures that the first MOSFET is turned off during surge events while allowing normal operation under standard conditions.

Career Highlights

Shaowei Han is currently employed at Signify Holding B.V., where he continues to innovate in the field of electronic components. His work is instrumental in advancing technologies that require robust surge protection and efficient power management.

Collaborations

One of his notable coworkers is Chenghu Luo, with whom he collaborates on various projects related to MOSFET technology.

Conclusion

Shaowei Han's contributions to MOSFET technology exemplify the importance of innovation in electronics. His patent for a surge protection method showcases his commitment to enhancing device reliability and efficiency.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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