This inventor holds 1 USPTO granted patent. Top assignee: Innoscience (Suzhou) Semiconductor Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Shaopeng Cheng and Semiconductor Device Innovation.
Introduction
Shaopeng Cheng is an inventor based in Zhuhai City, China, and is associated with Innoscience (Suzhou) Semiconductor Co., Ltd. His listed patent work concerns semiconductor device design and manufacturing.
Latest Patents
The provided information lists one patent for Cheng: “Semiconductor Device and Manufacturing Method Thereof.” The disclosed device includes a substrate, two nitride semiconductor layers with different band gaps, a dielectric layer, a gate electrode, and two conductive contacts. The second conductive contact is positioned between the gate electrode and the first conductive contact. The disclosure describes an arrangement intended to support semiconductor device fabrication and operation.
Career Highlights
Cheng’s listed portfolio comprises 1 patent. His work is associated with Innoscience (Suzhou) Semiconductor Co., Ltd., a company focused on semiconductor technology.
Collaborations
The provided information identifies Zhiwen Dong and Qiyue Zhao as Cheng’s coworkers. Their names are included here as professional associations; no specific joint patent contribution is stated in the supplied details.
Conclusion
Shaopeng Cheng’s listed invention addresses the structure and manufacturing of a nitride-based semiconductor device, reflecting his documented contribution to semiconductor innovation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile