Hsinchu, Taiwan

Shao-Yi Wu

This inventor holds 2 USPTO granted patents. Top assignee: Holtek Microelectronics Inc.. Active years: 1998.


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 1998

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2 patents (USPTO):Explore Patents

Title: Innovations of Shao-Yi Wu

Introduction

Shao-Yi Wu is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of electronics, particularly in voltage raising devices and EEPROM programming circuits. With a total of 2 patents, his work showcases innovative solutions to complex electrical challenges.

Latest Patents

One of his latest patents is a voltage raising device. This device comprises a first element that provides a first output pin with a voltage raise in response to a first voltage change at a first input pin. It also provides a second output pin with a voltage raise in response to a second voltage change at a second input pin. Additionally, a second element drives the output pins to maintain voltage levels in accordance with the changes at the input pins. Another significant patent is a simplified page mode programming circuit for EEPROM. This apparatus includes control gate potential control means and bit line potential control means, allowing for efficient programming of EEPROM cell arrays.

Career Highlights

Shao-Yi Wu is currently employed at Holtek Microelectronics Inc., where he continues to develop innovative electronic solutions. His work has been instrumental in advancing the capabilities of electronic devices, particularly in the areas of voltage management and memory programming.

Collaborations

He collaborates with Fu-Chung Wang, contributing to the development of cutting-edge technologies in their field.

Conclusion

Shao-Yi Wu's contributions to electronics through his patents reflect his innovative spirit and dedication to advancing technology. His work continues to influence the industry and inspire future inventions.

Profile summary based on public USPTO records.
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