Hopewell Junction, NY, United States of America

Shantha A Kumar

This inventor holds 1 USPTO granted patent. Top assignee: International Business Machines Corporation. Active years: 1993.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shantha A Kumar. Retrieved from https://idiyas.com/inventor/shantha-a-kumar

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 25(Granted Patents)


Company Filing History:


Years Active: 1993

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Innovator Shantha A Kumar: Pioneering Advances in Semiconductor Technology

Introduction

Shantha A Kumar is a notable inventor based in Hopewell Junction, NY (US). She has made significant contributions to the field of semiconductor technology, particularly in the development of field effect transistors (FETs). Her innovative work has led to the granting of a patent that showcases her expertise and creativity in this area.

Latest Patents

Shantha A Kumar holds a patent for a "Field effect transistor formed with deep-submicron gate." This patent describes a method of forming a semiconductor structure that includes several steps. The process involves providing a body of semiconductor material with a generally planar surface, forming a mesa with vertical walls, and creating a layer of material that conforms over the mesa and planar surface. A protective mask is then selectively applied to the vertical spacer, allowing for the etching and removal of unmasked portions. This innovative method is crucial for forming FETs by establishing a gate insulating layer beneath the vertical spacer, which is made from conductive gate material such as doped polysilicon. The vertical gate structure serves as a mask for doping the source and drain regions.

Career Highlights

Shantha A Kumar is currently employed at International Business Machines Corporation (IBM), where she continues to push the boundaries of semiconductor technology. Her work at IBM has positioned her as a key player in the advancement of electronic components that are essential for modern computing.

Collaborations

Throughout her career, Shantha has collaborated with esteemed colleagues, including Louis L Hsu and Chang-Ming Hsieh. These collaborations have further enriched her research and development efforts, leading to innovative solutions in the semiconductor industry.

Conclusion

Shantha A Kumar's contributions to semiconductor technology exemplify her dedication and ingenuity as an inventor. Her patent for a field effect transistor highlights her ability to innovate and solve complex challenges in the field. As she continues her work at IBM, her impact on technology will undoubtedly be felt for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…