Tamil Nadu, India

Shankar (nmn) Chandrasekaran


Average Co-Inventor Count = 12.0

ph-index = 1

Forward Citations = 14(Granted Patents)


Company Filing History:


Years Active: 2008

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1 patent (USPTO):Explore Patents

Title: Shankar (nmn) Chandrasekaran: Innovator in Photonic Crystal Technology

Introduction

Shankar (nmn) Chandrasekaran is a notable inventor based in Tamil Nadu, India. He has made significant contributions to the field of photonic technology, particularly in the development of devices used in Raman spectrometry. His innovative work has led to the creation of a unique collection probe that enhances the capabilities of Raman spectrometer systems.

Latest Patents

Chandrasekaran holds a patent for a "Collection probe for use in a Raman spectrometer system and methods of making and using the same." This invention features a photonic crystal-based collection probe designed to guide and condition a beam of Raman scattered photons. The probe is integrated with a spectrograph that is in optical communication with the photonic crystal, allowing it to receive Raman scattering effectively. This device is a valuable addition to Raman spectrometer systems, enhancing their functionality and performance. He has 1 patent to his name.

Career Highlights

Chandrasekaran is currently associated with Ge Homeland Protection, Inc., where he continues to innovate and develop advanced technologies. His work focuses on improving the efficiency and effectiveness of photonic devices, contributing to advancements in various scientific fields.

Collaborations

Some of his notable coworkers include Anis Zribi and Ayan Banerjee, who collaborate with him on various projects within the company. Their combined expertise fosters a creative environment that drives innovation.

Conclusion

Shankar (nmn) Chandrasekaran is a prominent figure in the realm of photonic technology, with a focus on enhancing Raman spectrometry through his innovative inventions. His contributions are paving the way for future advancements in this critical field.

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