Shang-Yi Chiang

Title: Shang-Yi Chiang: Semiconductor and Light-Emitting Diode Inventor

Introduction

Shang-Yi Chiang is an inventor associated with Richardson, Texas. His work includes semiconductor devices and light-emitting diode (LED) technology. He is credited with 4 patents.

Latest Patents

Two of Chiang’s listed patents concern small-area, surface-emitting LEDs built around a double-heterojunction semiconductor structure grown on a substrate.

“Method of Manufacturing a Light-Emitting Diode by Liquid Phase Epitaxy” describes a device designed to improve light-emission efficiency and confine current. A semiconductor blocking layer with an opening is positioned between the substrate and the LED structure. A metallic contact layer on the opposite side also has a corresponding opening. In some embodiments, the cap layer is etched to create an aligned opening, and the light-emitting layer is limited to the region around the openings.

“Light Emitting Diode Structure” describes a similar arrangement, using aligned openings in the blocking and contact layers to direct current and support surface emission. Optional openings in the cap layer and a restricted light-emitting region further enhance light output and current confinement.

Career Highlights

Chiang’s professional associations include International Telephone and Telegraph Corporation and Texas Instruments Corporation. His patent work reflects an emphasis on semiconductor structures and LED performance.

Collaborations

Among Chiang’s listed coworkers are Yet-Zen Liu and Bernard G. Carbajal. Their names appear alongside his professional and patent-related associations.

Conclusion

Shang-Yi Chiang’s recorded inventions focus on LED structures that use aligned openings and current confinement to improve light-emission efficiency.