Shang-Shuo Huang

Title: Innovations of Shang-Shuo Huang in Semiconductor Technology

Introduction

Shang-Shuo Huang is a notable inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent. His work focuses on enhancing semiconductor device structures, which are crucial for modern electronic applications.

Latest Patents

Shang-Shuo Huang holds a patent for a semiconductor device structure and methods of forming the same. This patent describes a semiconductor device structure that includes a first channel region disposed over a substrate, a second channel region adjacent to the first, and a gate electrode layer situated within both channel regions. Additionally, the structure features a first dielectric feature with a specific thickness and a second dielectric feature positioned between the channel regions, which has a thickness significantly less than that of the first dielectric feature. The second thickness ranges from about 1 nm to about 20 nm, showcasing the precision and innovation in his design.

Career Highlights

Shang-Shuo Huang is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His role at the company allows him to work on cutting-edge technologies that drive advancements in electronic devices. His patent reflects his expertise and commitment to improving semiconductor structures.

Collaborations

Shang-Shuo Huang collaborates with talented individuals such as Chen-Huang Huang and Yu-Ling Cheng. These partnerships enhance the innovation process and contribute to the development of advanced semiconductor technologies.

Conclusion

Shang-Shuo Huang's contributions to semiconductor technology through his patent demonstrate his innovative spirit and technical expertise. His work continues to influence the field and pave the way for future advancements in electronic devices.